2004. 5. 3 1/3 semiconductor technical data KIC7WZ00FK silicon monolithic cmos digital integrated circuit revision no : 2 2 input nand gate features high output drive : 24ma(min.) @v cc =3v. super high speed operation : tpd 2.4ns(typ.) @v cc =5v, 50pf. operation voltage range : v cc(opr) =1.65~5.5v. latch-up performance : 500ma or more esd performance : 200v or more (eiaj) 2000v or more (mil) dim millimeters a b d e us8 2.0 0.1 3.1 0.1 2.3 0.1 0.5 0.2+0.05/-0.04 0.7 0.1 0.12 0.04 0 ~ 0.1 c f g h a d d d c b e f g h 1 45 8 + _ + _ + _ + _ + _ maximum ratings (ta=25 ) marking lot no. z00 type name characteristic symbol rating unit power supply voltage v cc -0.5~6 v dc input voltage v in -0.5~6 v dc output voltage v out -0.5~6 v input diode current i ik -20 ma output diode current i ok -20 ma dc output current i out 50 ma dc v cc /ground current i cc 50 ma power dissipation p d 200 mw storage temperature range t stg -65 150 lead temperature (10s) t l 260 pin connection(top view) 1 2 3 4 1y 2b 2a 8 7 6 5 v cc 1a 1b 2y gnd
2004. 5. 3 2/3 KIC7WZ00FK revision no : 2 truth table a b y l l h l h h h l h h h l logic diagram in a in b & out y recommended operating conditions characteristic symbol rating unit supply voltage v cc 1.65~5.5 v 1.5~5.5 (note1) input voltage v in 0~5.5 v output voltage v out 0~5.5 (note2) v 0~v cc (note3) operating temperature t opr -40~85 input rise and fall time d t /d v 0~20 (v cc =1.8v 0.15v, 2.5v 0.2v) ns/v 0~10 (v cc =3.3v 0.3v) 0~5 (v cc =5.5v 0.5v) note1 : data retention only. note2 : v cc =0v. note3 : high or low state
2004. 5. 3 3/3 KIC7WZ00FK revision no : 2 electrical characteristics dc characteristics ac characteristics (unless otherwise specified, input : t r =t f =3ns) characteristic symbol test condition ta=25 ta=-40~85 unit v cc (v) min. typ. max. min. max. input voltage high level v ih - 1.65~1.95 0.75 v cc - - 0.75 v cc - v 2.3~5.5 0.7 v cc - - 0.7 v cc - low level v il - 1.65~1.95 - - 0.25 v cc - 0.25 v cc 2.3~5.5 - - 0.3 v cc - 0.3 v cc output voltage high level v oh v in =v ih or v il i oh =-100 a 1.65 1.55 1.65 - 1.55 - v 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - i oh =-4ma 1.65 1.29 1.52 - 1.29 - i oh =-8ma 2.3 1.9 2.15 - 1.9 - i oh =-16ma 3.0 2.4 2.8 - 2.4 - i oh =-24ma 3.0 2.3 2.68 - 2.3 - i oh =-32ma 4.5 3.8 4.2 - 3.8 - low level v ol v in =v ih or v il i oh =100 a 1.65 - 0 0.1 - 0.1 v 2.3 - 0 0.1 - 0.1 3.0 - 0 0.1 - 0.1 4.5 - 0 0.1 - 0.1 i oh =4ma 1.65 - 0.08 0.24 - 0.24 i oh =8ma 2.3 - 0.1 0.3 - 0.3 i oh =16ma 3.0 - 0.15 0.4 - 0.4 i oh =24ma 3.0 - 0.22 0.55 - 0.55 i oh =32ma 4.5 - 0.22 0.55 - 0.55 input leakage current i in v in =5.5v or gnd 0~5.5 - - 1 - 10 a quiescent supply current i cc v in =5.5v or gnd 1.65~5.5 - - 1 - 10 a characteristic symbol test condition ta=25 ta=-40~85 unit v cc (v) min. typ. max. min. max. propagation delay time t plh t phl c l =15pf, r l =1m 1.8 0.15 2.0 5.3 9.6 2.0 9.8 ns 2.5 0.2 1.2 3.2 5.3 1.2 5.7 3.3 0.3 0.8 2.4 3.7 0.8 4.0 5.0 0.5 0.5 1.9 2.9 0.5 3.2 c l =50pf, r l =500 3.3 0.3 1.2 3.0 4.6 1.2 4.9 ns 5.0 0.5 0.8 2.4 3.6 0.8 3.9 input capacitance c in - 0~5.5 - 3.0 - - - pf power dissipation capacitance c pd (note) 3.3 - 22 - - - pf 5.5 - 32 - - - note : c pd is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. average operating current can be obtained by the equation : i cc(opr) =c pd v cc f in +i cc /2
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